Upcoming Condensed Matter Talks

Fri, 2017-08-25 14:00 - 15:00
Taylor Stock, London Centre for Nanotechnology, University College London, UK
AMPEL #311

Device structures consisting of 2D patterned dopant atoms in silicon can be fabricated with near atomic precision using the technique of scanning tunnelling microscopy (STM) hydrogen desorption lithography. These types of devices, such as atomic scale wires and single atom transistors, can exhibit a variety of interesting quantum phenomena due to atomic scale spatial confinement of electrons within the structures. Traditionally, the patterned dopant of choice for this technique has been phosphorus (P).

Thu, 2017-09-07 14:00 - 15:00
Dr. Udai Raj Singh, Institute for Nanostructure and Solid State Physics, University of Hamburg
AMPEL #311
Several years after the discovery of iron-based superconductors, the 11 iron-chalcogenide superconductors have been found to exhibit the simplest crystal structure of the iron-based superconductors consisting of planar iron layers with chalcogenide (Te, Se) anions above and below. The crystal structure provides a well-defined and non-polar cleavage plane between chalcogenide layers without any surface reconstruction [1]. Therefore, they have become most suitable candidates for surface-sensitive scanning tunneling microscopy (STM) measurements.
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