We demonstrate use of a lock-in detection method that is capable of highly sensitive detection of carrier-envelope-phase-sensitive phenomena. This method can measure static offsets to the carrier-envelope phase. To demonstrate the ability to measure static offsets in the phase, the change in carrier-envelope phase caused by extracavity dispersion is measured. Unavoidable offsets in measurement of the carrier-envelope phase by the standard v-to-2v self-referencing scheme is analyzed. (C) 2004 Optical Society of America.